參數(shù)資料
型號(hào)： 2SC3831
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開(kāi)關(guān)晶體管）)
中文描述： 10 A, 500 V, NPN, Si, POWER TRANSISTOR
封裝： TO-3P, 3 PIN
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 25K
代理商： 2SC3831
71
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switching Transistor)
2S C3831
Application :
Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3831
600
500
10
10(
Pulse
20)
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC3831
1
max
100
max
500
min
10to30
0.5
max
1.3
max
8
typ
105
typ
Unit
mA
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=600V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=1A
I
C
=5A, I
B
=1A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat)–I
C
Temperature Characteristics
(Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0
0
2
4
6
8
10
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
800mA
1A
600mA
400mA
200mA
I
B
=12A
100mA
0.02
0.1
0.05
1
5
10
0.5
1
(I
C
/I
B
=5)
Collector Current I
C
(A)
V
BE
(sat)
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
25C
–55C
V
CE
(sat)
1
2
5
C
C
a
s
e
e
m
p
)
0.2
1
0.5
10
5
0.1
0.5
5
10
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
200V
I
C
:I
B1
:I
B2
=10:1:–2
0.1
1
2
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
100
50
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
100
500 600
50
1
0.5
1
0.05
0.01
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
10
50
8
100
500 600
0.05
0.02
1
0.5
0.1
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
DC
100
μ
s
1m
1ms
C
C
(
B
B
(
0
10
4
2
8
6
0
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCsTm
–CaTp
0.02
0.1
0.05
1
10
5
0.5
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
2Ca m
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–0.5A
Duty:less than 1%
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
40
5
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–1.0
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
4.5
max
t
f
(
μ
s)
0.5
max
I
(A)
0.5
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
相關(guān)PDF資料
PDF描述
2SC3832 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴(kuò)散平面晶體管（高壓和高速開(kāi)關(guān)晶體管）)
2SC3833 Isolated Flyback Switching Regulator with 9V Output
2SC3836 Silicon NPN Epitaxial
2SC3840K SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
2SC3840L TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 1A I(C) | TO-126
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC3833 制造商:n/a 功能描述:2SC3833
2SC3835 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 120V 7A TO3P
2SC3837KT146 制造商:ROHM Semiconductor 功能描述:
2SC3837KT146N 功能描述:兩極晶體管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC3837KT146N/P 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, RF, 18V, 50mA, SMT3, 2
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*