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參數(shù)資料
| 型號： | 2SC3279 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 2SC3279 |
2SC3279
NPN Silicon
Epitaxial Transistors
Features
High DC Current Gain and excellent hFE Linearity
hFE(1) =140-600 (VCE=1.0V, IC=0.5A)
hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
10
V
VCES
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - DC
Pulsed
(1)
2.0
5.0
A
IB
Base Current
0.2
A
PC
Collector power dissipation
750
mW
TJ
Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Voltage
(IC=10mAdc, IB=0)
10
---
Vdc
V(BR)EBO
Collector-Emitter Voltage
(IE=1.0mAdc, IC=0)
6.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=30Vdc,IE=0)
---
0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
---
0.1
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(2)
(IC=0.5Adc, VCE=1.0Vdc)
140
---
600
---
hFE(2)
DC Current Gain
(IC=2.0Adc, VCE=1.0Vdc)
70
200
---
VCE(sat)
Collector Saturation Voltage
(IC=2.0Adc, IB=50mAdc)
---
0.2
0.5
Vdc
VBE
Base Saturation Voltage
(IC=2.0Adc, VCE=1.0Vdc)
---
0.86
1.5
Vdc
fT
Transition Frequency
(VCE=1.0Vdc, IC=0.5Adc)
100
150
---
MHz
Cob
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
---
27
---
pF
(1) Pulse Width=10 ms (Max.), Duty Cycle=30% (Max.)
(2) hFE(1) Classification
L: 140-240, M: 200-330, N: 300-450, P: 420-600
TO-92
AE
B
C
D
G
Revision: 5
2007/03/02
omponents
20736 Marilla
Street Chatsworth
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MCC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97
14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.010
.104
2.44
2.64
TM
Micro Commercial Components
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
EC
B
www.mccsemi.com
1 of 3
2SC3279-L
2SC3279-M
2SC3279-N
2SC3279-P
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3279-BP | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3279M | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3279P-BP | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3279L-BP | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3279 | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3279_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications |
| 2SC3279_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic Encapsulated Transistor |
| 2SC3279L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 |
| 2SC3279-L | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors |
| 2SC3279M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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