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參數(shù)資料
| 型號(hào)： | 2SC3279 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 88K |
| 代理商： | 2SC3279 |
2SC3279
2003-03-25
1
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3279
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
VCES
30
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulsed
(Note 1)
ICP
5
A
Base current
IB
0.2
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
Note 1: Pulse width
= 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
0.1
mA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
10
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
6
V
hFE (1)
(Note 2)
VCE = 1 V, IC = 0.5 A
140
600
DC current gain
hFE (2)
VCE = 1 V, IC = 2 A
70
200
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 50 mA
0.2
0.5
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 2 A
0.86
1.5
V
Transition frequency
fT
VCE = 1 V, IC = 0.5 A
150
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
27
pF
Note 2: hFE (1) classification L: 140~240, M: 200~330, N: 300~450, P: 420~600
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3279-N | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3279-P | 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC3298A | 1.5 A, 180 V, NPN, Si, POWER TRANSISTOR |
| 2SC3298B-Y | 1.5 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 2SC3298BY | 1.5 A, 200 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3279_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications |
| 2SC3279_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic Encapsulated Transistor |
| 2SC3279L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 2A I(C) | TO-92 |
| 2SC3279-L | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Epitaxial Transistors |
| 2SC3279M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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