參數(shù)資料
型號: 2SC2982D
元件分類: 小信號晶體管
英文描述: 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, SC-62, 2-5K1A, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 158K
代理商: 2SC2982D
2SC2982
2006-11-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2982
Storobo Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A)
Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1314
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
VCES
30
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulse (Note 1)
ICP
4
A
DC
IB
0.4
Base current
Pulse (Note 1)
IBP
0.8
A
PC
500
Collector power dissipation
PC
(Note 2)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: 2SC2982 mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
相關(guān)PDF資料
PDF描述
2SC2982 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC2982A 2000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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2SC2996 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
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