- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49925 > 2SC2996 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SC2996 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 474K |
| 代理商： | 2SC2996 |
2SC2996
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2996
FM/AM RF, MIX, Local, IF
High Frequency Amplifier Applications
High stability oscillation voltage on FM local oscillator
Recommend FM/AM RF, MIX, local and IF
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
50
mA
Emitter current
IE
50
mA
Collector power dissipation
PC
150
wW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 4 V, IC = 0
0.5
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 1 mA
40
240
Reverse transfer capacitance
Cre
VCB = 6 V, f = 1 MHz
0.9
1.3
pF
Transition frequency
fT
VCE = 6 V, IC = 1 mA
150
350
MHz
Collector-base time constant
Ccrbb’
VCE = 6 V, IE = 1 mA, f = 30 MHz
15
30
ps
Noise figure
NF
4.0
dB
Power gain
Gpe
VCE = 6 V, IE = 1 mA, f = 100 MHz
(Figure 1)
15
dB
Oscillation output voltage
VOSC
VCE = 6 V, f = 100 MHz (Figure 2)
180
mV
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Unit: mm
JEDEC
TO-236
JEITA
―
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC2999E | HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC2999E | HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC2999-E | HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC2999-D | HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC2999C | HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2996-O | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2996-O-TE85L | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2999 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR SPA25V .03A .15W ECB |
| 2SC3000 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-92 30V .03A .25W ECB |
| 2SC3000D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。