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參數(shù)資料
| 型號(hào)： | 2SC2570A |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | 高頻低噪聲放大器NPN硅外延晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 119K |
| 代理商： | 2SC2570A |
Data Sheet P10404EJ3V0DS00
2
2SC2570A
ELECTRICAL CHARACTERISTICS (T
A
= +25 °C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Current Gain
h
FE
Note 1
V
CE
= 10 V, I
C
= 20 mA
40
–
200
–
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 20 mA
–
5.0
–
GHz
Output Capacitance
C
Ob
Note 2
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
–
0.7
0.9
pF
Insertion Power Gain
|
S
21e
|
2
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
8
10
–
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
–
1.5
3.0
dB
Maximum Available Gain
MAG
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
–
11.5
–
dB
Collector Cutoff Current
I
CBO
V
CB
= 15 V, I
E
= 0
–
–
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 2.0 V, I
C
= 0
–
–
0.1
μ
A
Notes 1.
Pulse Measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.
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| 2SC2570A-T | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC2570A(NE02132) | Discrete |
| 2SC2613K | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
| 2SC2618 | Silicon NPN Epitaxial |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2570A(NE02132) | 制造商:NEC 制造商全稱:NEC 功能描述:Discrete |
| 2SC2570A-A-E | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
| 2SC2570A-T | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC2577 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC2578 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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