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參數(shù)資料
| 型號(hào)： | 2SB860 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | 2SB860 |
2SB860
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–100
—
—
V
I
C
= –10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–4
—
—
V
I
E
= –1 mA, I
C
= 0
Collector cutoff current
I
CEO
I
EBO
V
CE(sat)
—
—
–100
μ
A
μ
A
V
CE
= –80 V, R
BE
=
∞
V
EB
= –3.5 V, I
C
= 0
I
C
= –1 A, I
B
= –0.1 A*
1
Emitter cutoff current
—
—
–50
Collector to emitter saturation
voltage
—
—
–1.0
V
DC current transfer ratio
h
FE
50
—
250
V
CE
= –4 V
I
C
= –0.5 A*
1
I
C
= –50 mA
25
—
350
Note:
1. Pulse test
Maximum Collector Dissepation
Curve
60
40
20
0
50
C
C
100
Case temperature T
C
(
°
C)
150
I
Cmax
–10
–3
–1.0
–0.3
–0.1
–0.03
–0.01
–1
–10
–100
–1,000
–3
–30
Collector to emitter voltage V
CE
(V)
–300
T
= 25
°
C
DC Operation
(–10 V, –4 A)
(–40 V, –1 A)
(–100 V, –50 mA)
Area of Safe Operation
C
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB861 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:Hitachi 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SB861B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C-E | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB862 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
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