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參數(shù)資料
| 型號(hào)： | 2SB859 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨（三倍擴(kuò)散進(jìn)步黨晶體管） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2SB859 |
2SB859
3
Typical Output Characteristics
T
C
= 25
°
C
I
B
= 0
–20 mA
–40
–60
–80
–140
–160
–5
–4
–3
–2
C
C
–1
0
–2
–6
–10
–8
–4
Collector to emitter voltage V
CE
(V)
P
C
0W
Typical Transfer Characteristcs
–10
–3
–1.0
–0.3
–0.1
C
C
–0.03
–0.01
0
–0.4
–0.8
Base to emitter voltage V
BE
(V)
–1.2
–0.2
–0.6
–1.0
–1.4
V
CE
= –5 V
T
C
7
°
C
2
–
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –5 V
T
C
= 75
°
C
1,000
300
100
30
D
F
10
3
1
–0.01
–0.1
Collector current I
C
(A)
–1.0
–10
–0.3
–0.03
–3
25
Collector to Emitter Saturation
Voltage vs. Collector Current
I
C
= 10 I
B
–10
–3
–1.0
–0.3
–0.1
–0.03
–0.01
–0.01
–0.1
Collector current I
C
(A)
C
V
C
–1.0
–10
–0.3
–0.03
–3
T
C
= 75
°
C
25
–25
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| 2SD2300 | Silicon NPN Triple Diffused |
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| 2SB861 | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 2SB865 | PNP Epitaxial Planar Silicon Darlington Tranasistors for Drivers Applications(驅(qū)動(dòng)器應(yīng)用的PNP硅外延平面型達(dá)林頓晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB859B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB860 | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB861 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:Hitachi 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SB861B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
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