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參數(shù)資料
| 型號： | 2SB647 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SB647 |
2SB647, 2SB647A
3
Maximum Collector Dissipation
Curve
1.2
0.8
0.4
0
50
150
100
Ambient Tmperature Ta (
°
C)
C
C
Typical Output Characteristics
–1.0
–0.8
–0.6
–0.4
–0.2
0
–2
–10
–6
–4
–8
I
B
= 0
–0.5mA
–2
–1
–5
–10
–20
–30
–40
–60
–100
–120
C
C
Collector to Emitter Voltage V
CE
(V)
P
C
= 0.9 W
Typical Transfer Characteristics
–500
–200
–100
–50
–20
–10
–5
–2
–1
0
–0.2
–0.4
–0.6
–0.8
–1.0
V
CE
= –5 V
Pulse
T
°
C
2
–
Base to Emitter Voltage V
BE
(V)
C
C
DC Current Transfer Ratio
vs. Collector Current
V
= –5 V
Pulse
Ta = 75
°
C
600
500
400
300
200
100
0
–1
–3
–30
–300
–10
Collector Current I
C
(mA)
D
F
–100
–1,000
25
–25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB647A | Silicon PNP Epitaxial |
| 2SB649L-D-AB3-R | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-B-AB3-B | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-B-AB3-K | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-B-AB3-R | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB647_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB647A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SB647AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB647ABTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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