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參數(shù)資料
| 型號(hào)： | 2SB647 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 33K |
| 代理商： | 2SB647 |
2SB647, 2SB647A
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SB647
2SB647A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
–120
–120
V
Collector to emitter voltage
–80
–100
V
Emitter to base voltage
–5
–5
V
Collector current
–1
–1
A
Collector peak current
–2
–2
A
Collector power dissipation
0.9
0.9
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SB647
2SB647A
Item
Symbol Min
Typ
Max
Min
Typ
Max Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–120 —
—
–120 —
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–80
—
—
–100 —
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
1
—
—
–10
—
—
–10
μ
A
V
CB
= –100 V, I
E
= 0
V
CE
= –5 V,
I
C
= –150 mA*
2
V
CE
= –5 V,
I
C
= –500 mA*
2
I
C
= –500 mA,
I
B
= –50 mA*
2
V
CE
= –5 V,
I
C
= –150 mA*
2
MHz V
CE
= –5 V, I
C
= –150 mA
pF
V
= –10 V, I
E
= 0
f = 1 MHz
DC current transfer ratio
60
—
320
60
—
200
h
FE2
30
—
—
30
—
—
Collector to emitter
saturation voltage
V
CE(sat)
—
—
–1
—
—
–1
V
Base to emitter voltage
V
BE
—
—
–1.5
—
—
–1.5 V
Gain bandwidth product
f
T
—
140
—
—
140
—
Collector output capacitance Cob
—
20
—
—
20
—
Notes: 1. The 2SB647 and 2SB647A are grouped by h
FE1
as follows.
2. Pulse test
B
C
D
2SB647
60 to 120
100 to 200
160 to 320
2SB647A
60 to 120
100 to 200
—
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