Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistor
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Ordering number:ENN346G
2SB631,631K/2SD600,600K
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11504TN (KT)/91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4
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( ) : 2SB631, 631K
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
Features
High breakdown voltage VCEO 100/120V, High
current 1A.
Low saturation voltage, excellent hFE linearity.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Tc=25C
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Continued on next page.