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| 型號(hào)： | 2SB631 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 38K |
| 代理商： | 2SB631 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistor
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Ordering number:ENN346G
2SB631,631K/2SD600,600K
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11504TN (KT)/91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4
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( ) : 2SB631, 631K
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
Features
High breakdown voltage VCEO 100/120V, High
current 1A.
Low saturation voltage, excellent hFE linearity.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Tc=25C
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Continued on next page.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD600-F | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD600K | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD600K-E | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB631-F | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD600K-E | 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB631D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-126 |
| 2SB631E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-126 |
| 2SB631F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-126 |
| 2SB631K | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB631KD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126 |
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