參數(shù)資料
型號: 2SB1427T100
元件分類: 小信號晶體管
英文描述: 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/2頁
文件大?。?/td> 61K
代理商: 2SB1427T100
2SB1427
Transistors
Power transistor (
20V, 2A)
2SB1427
!
Features
1) Low saturation voltage,
typically VCE(sat) =
0.5V at IC/IB = 1A / 50mA.
2) Excellent DC current gain characteristics.
!
External dimensions (Units : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Limits
20
6
2
0.5
2
Unit
V
A(DC)
3
A(Pulse)
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Tj
Tstg
150
55 ~ +150
°C
Storage temperature
1 Single pulse, Pw=10ms
2 When mounted on a 40×40×0.7mm ceramic board.
1
2
!
Packaging specifications and hFE
Type
2SB1427
MPT3
E
T100
BJ
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Denotes hFE
!
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
20
6
390
90
30
0.5
820
V
A
MHz
pF
IC
= 50A
IC
= 1mA
IE
= 50A
VCB
= 16V
VEB
= 5V
0.5
V
IC/IB
= 1A/500mA
VCE/IC
= 6V/0.5A
VCE
= 10V , IE = 10mA , f= 30MHz
VCB
= 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
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