- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369080 > 2SB1185 (Rohm CO.,LTD.) Power Transistor (-60V, -3A) PDF資料下載
參數(shù)資料
| 型號： | 2SB1185 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power Transistor (-60V, -3A) |
| 中文描述： | 功率晶體管（- 60V的，- 3A）條 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 244K |
| 代理商： | 2SB1185 |
2SB1184 / 2SB1243
Transistors
!
Electrical characteristics
(Ta=25
°
C)
2/3
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
!
Packaging specifications and h
FE
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
5
82
70
50
1
1
390
1
V
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
40V
V
EB
=
4V
V
CE
=
3V, I
C
=
0.5A
I
C
/I
B
=
2A/
0.2A
V
CE
=
5V, I
E
=
0.5A, f
=
30MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
μ
A
μ
A
V
V
BE(sat)
1.2
I
C
/I
B
=
1.5A/
0.15A
V
MHz
pF
Typ.
Max.
Unit
Conditions
Package
Code
Basic ordering unit (pieces)
TL
TV2
2500
2500
Taping
PQR
h
FE
PQR
2SB1184
2SB1243
Type
h
FE
values are classified as follows :
Item
P
Q
R
h
FE
82~180
120~270
180~390
!
Electrical characteristic curves
BASE TO EMITTER VOLTAGE : V
BE
(V)
C
C
0
0.2
1.4
0.4
0.8
1.2
1.6
1.8
1.0
0.6
0.01
0.05
0.1
0.02
0.5
1
0.2
5
10
2
V
CE
=
3V
Ta
=
100
°
C
25
°
C
-25
°
C
Fig.1 Grounded emitter
propagation characteristics
1
0
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
I
B
=
0mA
5mA
10mA
15mA
20mA
Tc
=
25
°
C
C
C
(
50mA
25mA
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (
Ι
)
Fig.3 Grounded emitter output
characteristics (
ΙΙ
)
10
0
20
30
40
50
0
0.5
1.0
2.0
1.5
2.5
3.0
I
B
=
0mA
I
B
=
5mA
10mA
25mA
15mA
30mA
P
C
=
15W
C
C
(
Tc=25
°
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
For the very latest product data and news visit angliac.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1244 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
| 2SB1245 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
| 2SB1257 | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達林頓）) |
| 2SB1258 | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達林頓）) |
| 2SB1259 | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達林頓）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1186 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220FP -120V -1.5A 20W BCE |
| 2SB1186A | 制造商:ROHM 制造商全稱:Rohm 功能描述:POWER TRANSISTOR |
| 2SB1186AE | 功能描述:TRANS DRVR PNP 160V 1.5A TO220FP RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1187 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB1187DEF | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。