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參數(shù)資料
| 型號(hào)： | 2SB1184 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power Transistor (-60V, -3A) |
| 中文描述： | 功率晶體管（- 60V的，- 3A）條 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 244K |
| 代理商： | 2SB1184 |
2SB1184 / 2SB1243
Transistors
3/3
0.01
0.05
0.1
0.02
0.5
1
0.2
5
10
2
1
5
10
2
50
100
20
500
1000
200
Ta
=
25
°
C
V
CE
=
5V
3V
D
F
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
collector current (
Ι
)
0.01
0.02
0.1
0.05
0.2
1
0.5
2
10
5
1
5
10
2
50
100
20
500
1k
200
V
CE
=
3V
D
F
COLLECTOR CURRENT : I
C
(A)
Ta
=
100
°
C
25
°
C
25
°
C
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
0.01
0.02
0.1
0.05
COLLECTOR CURRENT : I
C
(A)
0.2
1
0.5
2
10
5
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
C
C
(
Ta
=
25
°
C
I
C
/I
B
=
50/1
20/1
10/1
Fig.6 Collector-emitter saturation
voltage vs.collector current
COLLECTOR CURRENT : I
C
(A)
C
C
B
B
0.01
0.02
0.1
0.05
0.2
1
0.5
2
10
5
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
l
C
/l
B
=
10
Ta
=
25
°
C
25
°
C
100
°
C
Ta
=
100
°
C
25
°
C
25
°
C
V
BE(sat)
V
CE(sat)
Fig.7 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage vs.
collector current
1
2
10
5
20
100
50
200
1000
500
1
2
5
10
20
50
100
200
500
1000
EMITTER CURRENT : I
E
(mA)
T
T
(
Ta
=
25
°
C
V
CE
=
5V
Fig.8 Gain bandwidth product vs.
emitter current
C
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
0.2
0.1
0.5
10
5
2
1
50
20
100
1
20
10
5
2
50
200
100
500
1000
Ta
=
25
°
C
f
=
1MHz
I
E
=
0A
Fig.9 Collector output capacitance vs.
collector base voltage
Fig.10 Safe operation area
(2SB1184)
0.1
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10.0
0.2
0.5
1
2
5
10
20
50
100
Tc
25
°
C
Single
nonrepetitive
pulse
10m
P
W
=
1m
DC
Fig.11 Safe operation area
(2SB1243)
0.1
C
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10.0
0.2
0.5
1
2
5
10
20
50
100
Tc
°
C
Si25
nonrepetitive
pulse
I
C Max
. (Pulse)
P
w
=
1m
10m
DC
Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
For the very latest product data and news visit angliac.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1185 | Power Transistor (-60V, -3A) |
| 2SB1244 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
| 2SB1245 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
| 2SB1257 | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達(dá)林頓）) |
| 2SB1258 | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達(dá)林頓）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1184_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power Transistor (−60V, −3A) |
| 2SB1184_10 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power Transistor (-60V, -3A) |
| 2SB1184F5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252VAR |
| 2SB1184F5P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252 |
| 2SB1184F5Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252 |
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