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參數(shù)資料
| 型號(hào)： | 2SB1184 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power Transistor (-60V, -3A) |
| 中文描述： | 功率晶體管（- 60V的，- 3A）條 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 244K |
| 代理商： | 2SB1184 |
2SB1184 / 2SB1243
Transistors
!
Electrical characteristics
(Ta=25
°
C)
2/3
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
!
Packaging specifications and h
FE
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
60
50
5
82
70
50
1
1
390
1
V
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
40V
V
EB
=
4V
V
CE
=
3V, I
C
=
0.5A
I
C
/I
B
=
2A/
0.2A
V
CE
=
5V, I
E
=
0.5A, f
=
30MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
μ
A
μ
A
V
V
BE(sat)
1.2
I
C
/I
B
=
1.5A/
0.15A
V
MHz
pF
Typ.
Max.
Unit
Conditions
Package
Code
Basic ordering unit (pieces)
TL
TV2
2500
2500
Taping
PQR
h
FE
PQR
2SB1184
2SB1243
Type
h
FE
values are classified as follows :
Item
P
Q
R
h
FE
82~180
120~270
180~390
!
Electrical characteristic curves
BASE TO EMITTER VOLTAGE : V
BE
(V)
C
C
0
0.2
1.4
0.4
0.8
1.2
1.6
1.8
1.0
0.6
0.01
0.05
0.1
0.02
0.5
1
0.2
5
10
2
V
CE
=
3V
Ta
=
100
°
C
25
°
C
-25
°
C
Fig.1 Grounded emitter
propagation characteristics
1
0
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
I
B
=
0mA
5mA
10mA
15mA
20mA
Tc
=
25
°
C
C
C
(
50mA
25mA
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (
Ι
)
Fig.3 Grounded emitter output
characteristics (
ΙΙ
)
10
0
20
30
40
50
0
0.5
1.0
2.0
1.5
2.5
3.0
I
B
=
0mA
I
B
=
5mA
10mA
25mA
15mA
30mA
P
C
=
15W
C
C
(
Tc=25
°
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
For the very latest product data and news visit angliac.com
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| 2SB1185 | Power Transistor (-60V, -3A) |
| 2SB1244 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
| 2SB1245 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER |
| 2SB1257 | Silicon PNP Epitaxial Planar Transistor（Darlington）(硅PNP外延平面晶體管（達(dá)林頓）) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1184_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power Transistor (−60V, −3A) |
| 2SB1184_10 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Power Transistor (-60V, -3A) |
| 2SB1184F5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252VAR |
| 2SB1184F5P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252 |
| 2SB1184F5Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-252 |
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