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參數(shù)資料
| 型號： | 2SB1151-T60-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
| 中文描述： | 低集電極飽和電壓大電流 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 122K |
| 代理商： | 2SB1151-T60-T |
2SB1151
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R204-022,A
2
ABS OLUT E MAX IMUM RAT ING
(Ta=25
)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
RATINGS
-60
-60
-7
-5
-8
-1
1.5
20
125
0 ~ +70
-40 ~ +150
UNIT
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Pulse(Note 3)
Collector Current
A
Base Current
A
T
a
=25
T
c
=25
Power Dissipation
P
D
W
Junction Temperature
Operating Temperature
Storage Temperature
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.The device is guaranteed to meet performance specification within 0
and assured by design from -40
~ 85
.
3.PW
≤
10ms, Duty Cycle
≤
50%
T
J
T
OPR
T
STG
~70
operating temperature range
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
, unless otherwise specified.)
PARAMETER
SYMBOL
I
CBO
I
EBO
V
CE(sat)
I
C
=-2A, I
B
=-0.2A
V
BE(sat)
I
C
=-2A, I
B
=-0.2A
h
FE 1
V
CE
=-1V, I
C
=-0.1A
h
FE 2
V
CE
=-1V, I
C
=-2A
h
FE
3
V
CE
=-2V, I
C
=-5A
TEST CONDITIONS
V
CB
=-50V, I
E
=0
V
EB
=-7V, I
C
=0
MIN
60
160
50
TYP MAX UNIT
-10
-10
-0.14 -0.3
-.0.9 -1.2
400
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
μA
μA
V
V
DC Current Gain
Turn On Time
t
ON
0.15
1
Storage Time
t
STG
0.78
2.5
Switching Time
Fall Time
t
F
0
I
B1
20μsec
-I
B1
=I
B2
=0.2A
DUTY CYCLE
≤
1%
I
B2
INPUT
I
B1
I
B2
OUTPUT
V
CC
=-10V
5
0.18
1
μS
Pulse test : PW
≤
350 μS, Duty Cycle
≤
2% Pulse
CLAS S IFICAT ION OF hFE2
RANK
RANGE
O
Y
160 ~ 320
200 ~ 400
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