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參數(shù)資料
| 型號(hào)： | 2SB1106 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨（三倍擴(kuò)散進(jìn)步黨晶體管） |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 2SB1106 |
2SB1106
3
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature T
C
(
°
C)
C
C
10
3
1.0
0.3
C
C
0.01
0.03
–10
–300
–3
–30
–100
Collector to emitter voltage V
CE
(V)
Ta = 25
°
C
1 Shot Pulse
i
C(peak)
I
C(max)
1
μ
s
10
μ
s
D Oeao(
C
5
°
C
1m
Area of Safe Operation
T
C
= 25
°
C
I
B
= 0
–2.5
–2.0
–0.5 mA
–1.0
–1.5
–3.0
–10
–8
–6
–4
–2
0
–1
C
C
–2
Collector to emitter voltage V
CE
(V)
–3
–5
–4
Typical Output Characteristics
30,000
10,000
3,000
1,000
300
100
30
–0.1
–0.3
Collector current I
C
(A)
D
F
–1.0
–3
–10
Ta = 75
°
C
–25
°
C
25
°
C
V
= –3 V
Pulse
DC Current Transfer Ratio vs.
Collector Current
Saturation Voltage vs.
Collector Current
T
C
= 25
°
C
–10
–3
–1.0
–0.3
–0.1
C
C
B
B
–0.03
–0.01
–0.1
–0.3
Collector current I
C
(A)
–3
–1.0
–10
V
BE(sat)
V
CE(sat)
I
C
/
I
B
= 200
500
500
200
t
f
t
on
t
stg
V
CC
= –30V
I
C
= 100 I
B1
= –100 I
B2
–0.3
Collector current I
C
(A)
Ta = 25
°
C
Switching Time vs. Collector Current
S
μ
s
10
3
1.0
0.3
0.1
0.03
0.01
–0.1
–1.0
–3
–10
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| 2SB1108 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Medium Speed Switching Complementary Pair with 2SD1608 |
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| 2SB1109B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1109C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1109D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
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