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參數(shù)資料
| 型號： | 2SB1106 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 中文描述： | 三重擴(kuò)散硅進(jìn)步黨（三倍擴(kuò)散進(jìn)步黨晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SB1106 |
2SB1106
2
Electrical Characteristics
(Ta = 25
q
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
—
V
I
C
= –25 mA, R
BE
=
f
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
—
V
I
E
= –50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
—
—
–100
P
A
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
f
V
CE
= –3 V, I
C
= –3 A*
I
C
= –3 A, I
B
= –6 mA*
—
—
–10
P
A
DC current transfer ratio
1000
—
20000
1
Collector to emitter saturation
voltage
—
—
–1.5
V
1
V
CE(sat)2
V
BE(sat)1
—
—
–3.0
V
I
C
= –6 A, I
B
= –60 mA*
I
C
= –3 A, I
B
= –6 mA*
1
Base to emitter saturation
voltage
—
—
–2.0
V
1
V
BE(sat)2
V
D
t
on
t
stg
t
f
—
—
–3.5
V
I
C
= –6 A, I
B
= –60 mA*
I
D
= 6 A*
I
C
= –3 A, I
B1
= –I
B2
= –6 mA
1
C to E diode forward voltage
—
—
3.0
V
1
Turn on time
—
0.5
—
P
s
Storage time
—
3.0
—
P
s
Fall time
Note:
—
1.0
—
P
s
1. Pulse Test.
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| 2SB1108 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Medium Speed Switching Complementary Pair with 2SD1608 |
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| 2SB1109B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 2SB1109C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 100MA I(C) | TO-126 |
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