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參數(shù)資料
| 型號： | 2SB1094M |
| 廠商： | NEC Corp. |
| 英文描述： | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 中文描述： | 5個引腳µ帶看門狗和手動復(fù)位的P監(jiān)控電路 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 2SB1094M |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D16186EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1094
PNP SILICON EPITAXIAL
TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIER
DATA SHEET
FEATURES
The 2SB1094 features ratings covering a wide range of
applications and is ideal for power supplies or a variety of drives
in audio and other equipment.:
V
CEO
≥
60 V, V
EBO
≥
7.0 V, I
C(DC)
≤
3.0 A
Mold package that does not require an insulating board or
insulation bushing
Complementary transistor with 2SD1585
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
3.0
A
Collector current (pulse)
I
C(pulse)
*
5.0
A
Base current (DC)
I
B(DC)
0.6
A
Total power dissipation
P
T
(Tc = 25
°
C)
15
W
Total power dissipation
P
T
(Ta = 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
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