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參數(shù)資料
| 型號： | 2SB1079 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重擴散硅進步黨 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 36K |
| 代理商： | 2SB1079 |
2SB1079
4
Saturation Voltage vs.
Collector Current
Ta = 25
°
C
Pulse
–10
–3
–1.0
–0.3
–0.1
C
C
B
B
–0.03
–0.01
–0.3
Collector current I
C
(A)
–1.0
–3
–10
–30
V
BE(sat)
V
CE(sat)
I
C
/
I
B
= 200
500
500
200
Switching Time vs. Collector Current
S
μ
s
10
3
1.0
0.3
0.1
0.03
0.01
0.3
1.0
Collector current I
C
(A)
3
10
30
t
f
t
on
t
stg
V
CC
= –30V
I
B1
= –500/
B2
Ta = 25
°
C
Transient Thermal Resistance
10
3
1.0
0.3
0.1
0.03
0.01
0.1
1.0
10
100 (s)
(ms)
0.1
1.0
10
100
Time t
T
θ
j
°
C
T
C
= 25
°
C
1 Shot
0.1–100 s
0.1–100 ms
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