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參數(shù)資料
| 型號(hào)： | 2SB1079 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 36K |
| 代理商： | 2SB1079 |
2SB1079
3
Maximum Collector Dissipation
Curve
120
80
40
0
50
100
150
Case temperature T
C
(
°
C)
C
C
Area of Safe Operation
–100
–30
–10
–3
–1.0
C
C
–0.3
–0.1
–3
–10
–100
–30
–300
Collector to emitter voltage V
CE
(V)
Ta = 25
°
C
1 Shot Pulse
i
C(peak)
I
C(max)
DCT
C
=25
°
C
1
μ
s
PW=1 m
1m
100
μ
s
Typical Output Characteristics
T
C
= 25
°
C
I
B
= –0.5 mA
–1
–1.5
–2
–2.5
–4
–20
–16
–12
–8
–4
0
–1
C
C
–2
Collector to emitter voltage V
CE
(V)
–3
–5
–4
–3.5
–3
DC Current Transfer Ratio vs.
Collector Current
30000
10000
3000
300
100
1000
30
–0.3
–1.0
Collector current I
C
(A)
–3
–10
–30
D
F
V
CE
= –3 V
Pulse
Ta = 75
°
C
–25
°
C
25
°
C
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