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    參數(shù)資料
    型號: 2SB1072L
    廠商: Hitachi,Ltd.
    英文描述: Silicon PNP Triple Diffused
    中文描述: 三重擴散硅進(jìn)步黨
    文件頁數(shù): 2/6頁
    文件大?。?/td> 35K
    代理商: 2SB1072L
    2SB1072(L), 2SB1072(S)
    2
    Absolute Maximum Ratings
    (Ta = 25°C)
    Item
    Symbol
    Rating
    Unit
    Collector to base voltage
    V
    CBO
    V
    CEO
    V
    EBO
    I
    C
    I
    D
    *
    1
    I
    C(peak)
    P
    C
    *
    1
    Tj
    –100
    V
    Collector to emitter voltage
    –80
    V
    Emitter to base voltage
    –7
    V
    Collector current
    –4
    A
    C to E diode forward current
    4
    A
    Collector peak current
    –8
    A
    Collector power dissipation
    20
    W
    Junction temperature
    150
    °
    C
    °
    C
    Storage temperature
    Note:
    1. Value at T
    C
    = 25
    °
    C
    Tstg
    –55 to +150
    Electrical Characteristics
    (Ta = 25°C)
    Item
    Symbol
    Min
    Typ
    Max
    Unit
    Test conditions
    Collector to emitter breakdown
    voltage
    V
    (BR)CEO
    –80
    V
    I
    C
    = –25 mA, R
    BE
    =
    Emitter to base breakdown
    voltage
    V
    (BR)EBO
    –7
    V
    I
    E
    = –50 mA, I
    C
    = 0
    Collector cutoff current
    I
    CBO
    I
    CEO
    h
    FE
    V
    CE(sat)1
    V
    CE(sat)2
    V
    BE(sat)1
    V
    BE(sat)2
    V
    D
    t
    on
    t
    stg
    t
    f
    –100
    μ
    A
    μ
    A
    V
    CB
    = –80 V, I
    E
    = 0
    V
    CE
    = –60 V, R
    BE
    =
    V
    CE
    = –3 V, I
    C
    = –2 A*
    1
    I
    C
    = –2 A, I
    B
    = –4 mA*
    1
    I
    C
    = –4 A, I
    B
    = –40 mA*
    1
    I
    C
    = –2 A, I
    B
    = –4 mA*
    1
    I
    C
    = –4 A, I
    B
    = –40 mA*
    1
    I
    D
    = 4 A*
    1
    I
    C
    = –2 A, I
    B1
    = –I
    B2
    = –4 mA
    –10
    DC current transfer ratio
    1000
    20000
    Collector to emitter saturation
    –1.5
    V
    voltage
    –3.0
    V
    Base to emitter saturation
    –2.0
    V
    voltage
    –3.5
    V
    C to E diode forward voltage
    3.0
    V
    Turn on time
    0.5
    μ
    s
    μ
    s
    μ
    s
    Storage time
    1.5
    Fall time
    Note:
    1.0
    1. Pulse test.
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
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