參數(shù)資料
型號: 2SB1072L
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Triple Diffused
中文描述: 三重擴散硅進步黨
文件頁數(shù): 2/6頁
文件大小: 35K
代理商: 2SB1072L
2SB1072(L), 2SB1072(S)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
D
*
1
I
C(peak)
P
C
*
1
Tj
–100
V
Collector to emitter voltage
–80
V
Emitter to base voltage
–7
V
Collector current
–4
A
C to E diode forward current
4
A
Collector peak current
–8
A
Collector power dissipation
20
W
Junction temperature
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–80
V
I
C
= –25 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–7
V
I
E
= –50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
D
t
on
t
stg
t
f
–100
μ
A
μ
A
V
CB
= –80 V, I
E
= 0
V
CE
= –60 V, R
BE
=
V
CE
= –3 V, I
C
= –2 A*
1
I
C
= –2 A, I
B
= –4 mA*
1
I
C
= –4 A, I
B
= –40 mA*
1
I
C
= –2 A, I
B
= –4 mA*
1
I
C
= –4 A, I
B
= –40 mA*
1
I
D
= 4 A*
1
I
C
= –2 A, I
B1
= –I
B2
= –4 mA
–10
DC current transfer ratio
1000
20000
Collector to emitter saturation
–1.5
V
voltage
–3.0
V
Base to emitter saturation
–2.0
V
voltage
–3.5
V
C to E diode forward voltage
3.0
V
Turn on time
0.5
μ
s
μ
s
μ
s
Storage time
1.5
Fall time
Note:
1.0
1. Pulse test.
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