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參數(shù)資料
| 型號： | 2SB1072K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused(三倍擴散PNP晶體管) |
| 中文描述： | 三重擴散硅進步黨（三倍擴散進步黨晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 2SB1072K |
2SB1072(L), 2SB1072(S)
2
Absolute Maximum Ratings
(Ta = 25
q
C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
D
*
I
C(peak)
P
C
*
Tj
–100
V
Collector to emitter voltage
–80
V
Emitter to base voltage
–7
V
Collector current
–4
A
C to E diode forward current
1
4
A
Collector peak current
–8
A
Collector power dissipation
1
20
W
Junction temperature
150
q
C
Storage temperature
Note:
1. Value at T
C
= 25
q
C
Tstg
–55 to +150
q
C
Electrical Characteristics
(Ta = 25
q
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–80
—
—
V
I
C
= –25 mA, R
BE
=
f
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
—
V
I
E
= –50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
D
t
on
t
stg
t
f
—
—
–100
P
A
V
CB
= –80 V, I
E
= 0
V
CE
= –60 V, R
BE
=
f
V
CE
= –3 V, I
C
= –2 A*
I
C
= –2 A, I
B
= –4 mA*
I
C
= –4 A, I
B
= –40 mA*
I
C
= –2 A, I
B
= –4 mA*
I
C
= –4 A, I
B
= –40 mA*
I
D
= 4 A*
I
C
= –2 A, I
B1
= –I
B2
= –4 mA
—
—
–10
P
A
DC current transfer ratio
1000
—
20000
1
Collector to emitter saturation
—
—
–1.5
V
1
voltage
—
—
–3.0
V
1
Base to emitter saturation
—
—
–2.0
V
1
voltage
—
—
–3.5
V
1
C to E diode forward voltage
—
—
3.0
V
1
Turn on time
—
0.5
—
P
s
Storage time
—
1.5
—
P
s
Fall time
Note:
—
1.0
—
P
s
1. Pulse test.
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| 2SB1103 | Silicon PNP Triple Diffused |
| 2SB1106 | Silicon PNP Triple Diffused(三倍擴散PNP晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1072L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Triple Diffused |
| 2SB1072S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Triple Diffused |
| 2SB1073 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SB10730RL | 功能描述:TRANS PNP LF 20VCEO 4A MINI-PWR RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1073-PQR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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