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參數(shù)資料
| 型號： | 2SB1028 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SB1028 |
2SB1028
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
*
1
P
C
*
2
Tj
–180
V
Collector to emitter voltage
–160
V
Emitter to base voltage
–5
V
Collector current
–1.5
A
Collector peak current
–3
A
Collector power dissipation
1
W
Junction temperature
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10 ms, Duty cycle
≤
20%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–180
—
—
V
I
C
= –1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–160
—
—
V
I
C
= –10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
V
I
E
= –1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
1
—
—
–10
μ
A
V
CB
= –160 V, I
E
= 0
V
= –5 V, I
C
= –0.15 A,
pulse
DC current transfer ratio
60
—
200
h
FE2
30
—
—
V
= –5 V, I
C
= –0.5 A,
pulse
Collector to emitter saturation
voltage
V
CE(sat)
—
—
–1.0
V
I
= –0.5 A, I
B
= –50 mA,
Pulse
Base to emitter voltage
V
BE
—
—
–0.9
V
V
= –5 V, I
C
= –0.15 A,
pulse
Note:
Mark
1. The 2SB1028 is grouped by h
FE1
as follows.
EL
EM
h
FE1
60 to 120
100 to 200
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1028EL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB1028EM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB1028EMTR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB103 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-5 -30V -.1A .125W |
| 2SB1030 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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