參數(shù)資料
型號: 2SB1018A-Y
元件分類: 功率晶體管
英文描述: 7 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: 2-10R1A, 3 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 173K
代理商: 2SB1018A-Y
2SB1018A
2005-02-02
3
Collector current IC (A)
IC – VCE
Col
lect
or
-e
m
itte
rv
olt
a
ge
V
CE
(V
)
Collector current IC (A)
VCE – IC
Col
lect
or
-e
m
itte
rv
olt
a
ge
V
CE
(V
)
Collector-emitter voltage VCE (V)
IC – VCE
C
ollect
or
c
urre
nt
I C
(
A
)
Collector current IC (A)
VCE – IC
Col
lect
or
-e
m
itte
rv
olt
a
ge
V
CE
(V
)
Collector current IC (A)
hFE – IC
D
C
c
urr
en
tg
ai
n
h
FE
Collector current IC (A)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(
sa
t)
(
V
)
Common emitter
Tc = 25°C
0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
6
7
IB = 20 mA
40
100
200
300
400
600
700
500
0
1
2
3
4
5
6
7
0.2
0.4
0.6
0.8
1.0
1.2
Common emitter
Tc = 100°C
IB = 20 mA
40
100 200
300
400
600
700
500
0
1
2
3
4
5
6
7
0.2
0.4
0.6
0.8
1.0
1.2
Common emitter
Tc = 55°C
IB = 20 mA
100
150
200
300
400
500
600
700
0.01
0.03
Common emitter
IC/IB = 10
0.03
0.05
0.1
0.3
0.5
1
0.1
0.3
1
3
10
25
55
Tc = 100°C
0
Common emitter
Tc = 25°C
2
4
6
8
10
2
4
6
8
10
IB = 20 mA
60
40
80
100
120
140
160
180
200
0
0.03
Common emitter
VCE = 1 V
10
30
50
100
300
500
1000
0.1
0.3
1
3
10
25
55
Tc = 100°C
相關(guān)PDF資料
PDF描述
2SB1018A-O 7 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1020A 7 A, 100 V, PNP, Si, POWER TRANSISTOR
2SB1025-DJ SMALL SIGNAL TRANSISTOR
2SB1025DH SMALL SIGNAL TRANSISTOR
2SB1025-DK SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1018A-Y(F) 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, TOSH, TO220, 7A, 80V
2SB1019 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors
2SB1020 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors
2SB1020A 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TRANSISTOR (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
2SB1020A(F) 功能描述:兩極晶體管 - BJT HFE 2000(min) VCE-3V Vcbo -100V DC -7A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2