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參數(shù)資料
| 型號： | 2SB1012(K) |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SB1012(K) |
2SB1012(K)
3
0
50
100
150
Case Temperature T
C
(
°
C)
C
Maximum Collector Dissipation Curve
10
20
30
–0.003
–0.01
–0.03
–0.1
–0.3
–1.0
–3
Collector to emitter Voltage V
CE
(V)
C
C
–3
–10
–30
–100
–300
Area of Safe Operation
i
C
(peak)
I
C
(max)
Ta = 25
°
C
1 Shot pulse
D T
C
=2
°
C
PW=
1 s
10
μ
s
1m
1
μ
s
Collector to emitter Voltage V
CE
(V)
C
C
0
–1
–2
–3
–4
–5
Typical Output Characteristics
–1
–2
–3
–4
–5
T
= 25
°
C
Pulse
I
B
= –0.3 mA
–0.5 mA
–1 mA
–3 mA
–5 mA
–7 mA
30
–0.03
100
300
1,000
3,000
10,000
30,000
Collector current I
C
(A)
D
F
–0.1
–0.3
–1.0
–3
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –3 V
Pulse Test
Ta = 75
°
C
25
°
C
–25
°
C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1015 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1015A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
| 2SB1015AO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB1015AY | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB1015A-Y(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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