參數(shù)資料
型號(hào): 2SA854S
廠商: Rohm CO.,LTD.
英文描述: Medium Power Transistor
中文描述: 中等功率晶體管
文件頁數(shù): 3/4頁
文件大小: 75K
代理商: 2SA854S
2SA854S
Transistors
1000
Rev.A
3/3
500
200
100
50
20
D
F
-1
-2
-5 -10 -20
-50-100-200-500 -1000
Ta
=
25
°
C
V
CE
=
5V
3V
1V
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 DC current gain vs.
collector current ( )
Ι
500
1000
200
100
50
20
-1
-2
-5 -10 -20
-50-100-200 -500-1000
D
F
V
CE
=
3V
Ta
=
100
°
C
25
°
C
55
°
C
COLLECTOR CURRENT : I
C
(
mA)
Fig.5 DC current gain vs.
collector current ( )
Fig.6 Collector-emitter saturation
voltage vs. collector current ( )
-0.1
C
C
V
-1 -2
-5 -10 -20
-50 -100-200 -500
-1
-0.5
-0.2
-0.05
-0.02
Ta
=
25
°
C
COLLECTOR CURRENT : I
C
(
mA)
I
C
/I
B
=
50
20
10
-0.05
-0.03
-0.02
-0.01
-1
-2
-5
-10
-20
-50 -100 -200
-500 -1000
-0.5
-0.3
-0.2
-0.1
-1.0
l
C
/l
B
=
10
C
C
V
Ta
=
100
°
C
25
°
C
55
°
C
COLLECTOR CURRENT : I
C
(
mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( )
50
0.5
20
50
100
200
500
1000
1
2
5
10
Fig.8
Gain bandwidth product
vs.
emitter current
EMITTER CURRENT : I
E
(
mA)
T
T
M
Ta
=
25
°
C
V
CE
=
5V
C
p
E
p
-50
-0.5
-20
2
5
10
50
100
-1
-2
-5
-10
20
Ta
=
25
°
C
f
=
1MHz
I
E
=
0A
I
C
=
0A
COLLECTOR TO BASE VOLTAGE : V
CB
(
V)
EMITTER TO BASE VOLTAGE : V
EB
(
V)
Fig.9 Collector output capacitance vs.
collector-base voltage. Emitter input
capacitance vs. emitter-base voltage
相關(guān)PDF資料
PDF描述
2SA872
2SA872AD 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2SA872AE TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92
2SA872D 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2SA872E TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 50MA I(C) | TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA854STPQ 功能描述:兩極晶體管 - BJT DVR PNP 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA854STPR 功能描述:兩極晶體管 - BJT DVR PNP 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA857 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-150V -.05A .5W ECB
2SA858 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-150V -.05A .5W ECB
2SA866 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-30V -.1A .3W EBC