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參數資料
| 型號： | 2SA733-X-AE3-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | 低頻功放進步黨外延硅晶體管 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SA733-X-AE3-R |
2SA733
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-068,B
ABS OLUT E MAX IMUM RAT ING
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
I
C
T
J
T
STG
RATINGS
-60
-50
-5
250
-150
125
-55 ~ +150
UNIT
V
V
V
mW
mA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25
Collector Current
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
)
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
V
CE(SAT)
I
CBO
I
EBO
h
FE
f
T
Cob
TEST CONDITIONS
I
C
=-100
μ
A, I
E
=0
I
C
=-10mA, I
B
=0
I
C
=-100mA, I
B
=-10mA
V
CB
=-40V, I
E
=0
V
EB=
-3V, I
C
=0
V
CE
=-6V, I
C
=-1mA
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
I
C
=-0.1mA, V
CE
=-6V
R
G
=10k
, f=100Hz
MIN TYP MAX UNIT
-60
-50
-0.1
90
100
190
2.0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
Current Gain Bandwidth Product
Output Capacitance
V
V
V
nA
nA
-0.3
-100
-100
600
MHz
pF
3.0
Noise Figure
NF
4.0
6.0
dB
CLAS S IFICAT ION OF h
FE
RANK
RANGE
R
Q
P
K
90-180
135-270
200-400
300-600
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| 2SA733-X-AL3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
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| 2SA733-X-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
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