- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49902 > 2SA2025 (SANYO SEMICONDUCTOR CO LTD) 3000 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SA2025 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SPA, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 2SA2025 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
DC/DC Converter Applications
Ordering number:ENN6404
2SA2025
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21000TS (KOTO) TA-2707 No.6404–1/4
Package Dimensions
unit:mm
2033A
[2SA2025]
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Applications
Relay drivers, lamp drivers, motor drivers, strobes.
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall-sized package permitting applied sets to
be made small and slim.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta = 25C
Continued on next page.
4.0
0.4
0.5
0.4
0.6
15.0
3.0
1.8
12
3
2.2
0.4
1.3
3.0
3.8nom
0.7
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
5
1
–V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
2
1
–V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
5
–V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
3
–A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
5
–A
t
n
e
r
u
C
e
s
a
BIB
0
6
–A
m
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
5
.
0W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
2
1
–
=
E 0
=1
.
0
–A
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
–
=
C 0
=1
.
0
–A
n
i
a
G
t
n
e
r
u
C
Dh E
F
V E
C
I
,
V
2
–
=
C
A
m
0
5
–
=0
0
20
6
5
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
2
–
=
C
A
m
0
5
–
=0
8
2z
H
M
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
Ob
o
CV B
C
z
H
M
1
=
f
,
V
0
1
–
=
6
3F
p
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV E
C
)
t
a
s
(IC
I
,
A
5
.
1
–
=
B
A
m
0
3
–
=0
1
–5
6
1
–V
m
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
e
s
a
BV E
B
)
t
a
s
(IC
I
,
A
5
.
1
–
=
B
A
m
0
3
–
=5
8
.
0
–2
.
1
–V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA2025 | 3000 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2034 | 2000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2048TLR | 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2056 | Si, SMALL SIGNAL TRANSISTOR |
| 2SA2058 | 1500 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2026 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
| 2SA2026_10 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
| 2SA2027 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON EPITAXIAL TRANSISTOR |
| 2SA2028 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
| 2SA202800L | 功能描述:TRANS PNP 20VCEO 1A S-MINI 3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。