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參數(shù)資料
| 型號(hào)： | 2SA1955-A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SSM, 2-2H1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 438K |
| 代理商： | 2SA1955-A |
2SA1955
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
Large collector current: IC = 400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1955-A(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1955-B(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1955FVATPL3Z | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM 制造商:Toshiba America Electronic Components 功能描述:Transistors Bipolar - BJT PNP Trans -0.4A LN -12V VCEO |
| 2SA1955FVBTPL3Z | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM |
| 2SA19610QAHW | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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