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參數(shù)資料
| 型號： | 2SA1952 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | High-speed Switching Transistor(高速開關(guān)晶體管) |
| 中文描述： | 高速開關(guān)晶體管（高速開關(guān)晶體管） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 2SA1952 |
2SA1952 / 2SA1906 / 2SA2006
Transistors
High-speed Switching Transistor (
60V,
5A)
2SA1952 / 2SA1906 / 2SA2006
!
Features
1) High speed switching. (tf : Typ. 0.15
μ
s at I
C
=
3A)
2) Low V
CE(sat)
. (Typ.
0.2V at I
C
/ I
B
=
3 /
0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103 / 2SC5525.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
60
5
5
10
1
10
1.5
25
2
25
150
55
～ +
150
Unit
V
V
V
A
A(Pulse)
W
W(Tc
=
25
°
C)
W
W(Tc
=
25
°
C)
W
W(Tc
=
25
°
C)
°
C
°
C
2SA1952
2SA1906
2SA2006
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
2SA1952
CPT3
Q
TL
2500
2SA1906
PSD3
DEF
TL
1000
2SA2006
TO-220FN
EF
500
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
2
0
1
0
9.5
2.5
0.8Min.
1.5
6
2
(
(
C0.5
0
0.9
(
0
2
0
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
ROHM : PSD3
EIAJ : SC-83A
ROHM : TO-220FN
2SA2006
2SA1906
2SA1952
5
1
0
0.5Min.
0
1
4
0
(1) Base
(2) Collector
(3) Emitter
1
8.8
(
(
2
(
5
3.2
13.1
1
(3) Emitter(Source)
(2) Collector(Drain)
0.75
0.8
2.54
(3)
(1)
(3)
(2)
(1)
2.54
(2)
5
8
1
1
1
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
!
Electrical characteristics
(Ta = 25
°
C)
Min.
100
Typ.
Max.
Unit
Conditions
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
ton
tstg
tf
5
120
60
100
80
130
10
10
0.3
0.5
1.2
270
320
320
V
V
V
μ
A
μ
A
V
V
V
MHz
pF
μ
s
μ
s
μ
s
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
100V
V
EB
=
5V
I
C
/I
B
=
3A/
0.15A
I
C
/I
B
=
4A/
0.2A
I
C
/I
B
=
3A/
0.15A
BV
CEO
60
V
BE(sat)
1.5
V
I
C
/I
B
=
4A/
0.2A
h
FE
V
CE
=
2V , I
C
=
1A
2SA1952
2SA1906
2SA2006
V
CE
=
10V , I
E
=
0.5A , f
=
30MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
I
C
=
3A , R
L
=
10
I
B1
=
I
B2
=
0.15A
V
CC
30V
0.3
1.5
0.3
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
DC current
transfer ratio
Collector-base breakdown voltage
Parameter
BV
CBO
Symbol
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA2006 | High-speed Switching Transistor(高速開關(guān)晶體管) |
| 2SA1907 | Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
| 2SA1908 | Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
| 2SA1909 | Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose) |
| 2SA1958 | Silicon PNP Epitaxial(外延PNP晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1952TLQ | 功能描述:兩極晶體管 - BJT PNP 60V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1952TL-Q | 制造商:ROHM Semiconductor 功能描述: |
| 2SA1954-A(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1954-ATE85LF | 制造商:Toshiba America Electronic Components 功能描述:GP XSTOR SINGLE ARRAY |
| 2SA1954-B(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
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