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參數(shù)資料
| 型號(hào)： | 2SA1900T100Q |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | 2SA1900T100Q |
2SA1900
Transistors
Rev.C
1/2
Medium power transistor (
50V, 1A)
2SA1900
Features
1) Low saturation voltage, typically VCE(sat)=0.15V at IC/
IB=500mA/50mA
2) PC=2W (on 40×40×0.7mm ceramic board)
3) Complements the 2SC5053
Dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
Absolute maximum ratings (Ta=25
°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
Collector power dissipation
Collector current
Collector power dissipation
Storage temperature
Symbol
Limits
60
50
5
1
0.5
2
150
55 to +150
Unit
V
A
2
A (Pulse)
W
1
2
°C
1 Pw=20ms, Duty=1/2
2 When mounted on a 40 40 0.7mm seramic board.
VCBO
VCEO
VEBO
IC
PC
t j
tstg
+
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Cob
60
50
5
120
150
20
0.1
0.4
270
V
A
V
MHz
pF
IC=
50A
IC=
1mA
IE=
50A
VCB=
40V
VEB=
4V
IC/IB=
500mA/50mA
VCE/IC=
3V/0.5A
VCE=
5V , IE=50mA , f=100MHz
VCB=
10V , IE=0A , f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
VCE(sat)
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pleces)
2SA1900
MPT3
Q
T100
Marking
AL
1000
Denotes hFE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1901 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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