參數(shù)資料
型號： 2SA1744-K-AZ
元件分類： 功率晶體管
英文描述： 15 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝： PLASTIC, FULL PACK-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 144K
代理商： 2SA1744-K-AZ
'DWD 6KHHW'(-9'6
6$
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Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC =
8.0 A, IB = 0.8 A, L = 1 mH
60
V
Collector to emitter voltage
VCEX(SUS)
IC =
8.0 A, IB1 = IB2 = 0.8 A,
VBE(OFF) = 1.5 V, L = 180
H, clamped
60
V
Collector cutoff current
ICBO
VCB =
60 V, IE = 0
10
A
Collector cutoff current
ICER
VCE =
60 V, RBE = 50 , TA = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE =
60 V, VBE(OFF) = 1.5 V
10
A
Collector cutoff current
ICEX2
VCE =
60 V, VBE(OFF) = 1.5 V,
TA = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0
10
A
DC current gain
hFE1*
VCE =
2.0 V, IC = 1.5 A
100
DC current gain
hFE2*
VCE =
2.0 V, IC = 3.0 A
100
400
DC current gain
hFE3*
VCE =
2.0 V, IC = 8.0 A
60
Collector saturation voltage
VCE(sat)1*
IC =
8.0 A, IB = 0.4 A
0.3
V
Collector saturation voltage
VCE(sat)2*
IC =
12 A, IB = 0.6 A
0.5
V
Base saturation voltage
VBE(sat)1*
IC =
8.0 A, IB = 0.4 A
1.2
V
Base saturation voltage
VBE(sat)2*
IC =
12 A, IB = 0.6 A
1.5
V
Collector capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
300
pF
Gain bandwidth product
fT
VCE =
10 V, IC = 1.5 A
80
MHz
Turn-on time
ton
0.3
s
Storage time
tstg
1.5
s
Fall time
tf
IC =
8.0 A, RL = 6.3 ,
IB1 =
IB2 = 0.4 A, VCC 50 V
Refer to the test circuit.
0.3
s