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參數(shù)資料
| 型號(hào)： | 2SA1744-K-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 144K |
| 代理商： | 2SA1744-K-AZ |
Document No. D13160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1744
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1744 is a power transistor developed for high-speed
switching and features a high hFE at Low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High hFE and low VCE(sat):
hFE
≥ 100 (VCE = 2 V, IC = 3 A)
VCE(sat)
≤ 0.3 V (IC = 8 A, IB = 0.4 A)
Full-mold package that does not require an insulating board or
bushing
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
15
A
Collector current (pulse)
IC(pulse)*
30
A
Base current (DC)
IB(DC)
7.5
A
Total power dissipation
PT (Tc = 25
°C)
30
W
Total power dissipation
PT (Ta = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 300
s, duty cycle ≤ 10%
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| 2SA1744-K-AZ | 15 A, 60 V, PNP, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1744-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1744-M-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1746 | 制造商:Sanken Electric Co Ltd 功能描述:Trans GP BJT PNP 50V 12A 3-Pin (3+Tab) TO-3PF Box 制造商:Sanken Electric Co Ltd 功能描述:PNP Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP 50V 12A TO3PF |
| 2SA17480RL | 功能描述:TRANS PNP 50VCEO 50MA SMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA1748GRL | 功能描述:TRANS PNP 50VCEO 50MA SMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
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