- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370046 > 2SA1190 (Hitachi,Ltd.) Silicon PNP Epitaxial PDF資料下載
參數(shù)資料
| 型號： | 2SA1190 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 45K |
| 代理商： | 2SA1190 |
2SA1190, 2SA1191
3
Electrical Characteristics
(Ta = 25°C)
2SA1190
2SA1191
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–90
—
—
–120
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–90
—
—
–120
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
—
—
–0.1
—
—
–0.1
μ
A
μ
A
V
CB
= –70 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA*
2
I
C
= –10 mA,
I
B
= –1 mA*
2
Emitter cutoff current
—
—
–0.1
—
—
–0.1
DC current trnsfer ratio
250
—
800
250
—
800
Collector to emitter
saturation voltage
V
CE(sat)
—
–0.05 –0.15 —
–0.05 –0.15 V
Base to emitter
saturation voltage
V
BE(sat)
—
–0.7
–1.0
—
–0.7
–1.0
V
Gain bandwidth product f
T
—
130
—
—
130
—
MHz
V
CE
= –6 V,
I
C
= –10 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
Collector output
capacitance
Cob
—
3.2
—
—
3.2
—
pF
Noise figure
NF
—
0.15
1.5
—
0.15
1.5
dB
V
CE
= –6 V,
I
C
= –0.1 mA,
R
= 10 k
f = 1 kHz
—
0.2
2.0
—
0.2
2.0
dB
V
CE
= –6 V,
I
C
= –0.1 mA,
R
= 10 k
f = 10 Hz
Noise voltage reffered
to input
e
n
—
0.7
—
—
0.7
—
nV/
√
Hz
V
CB
= –6 V,
I
= –10 mA,
Rg = 0, f = 1 kHz
Notes: 1. The 2SA1190 and 2SA1191 are grouped by h
FE
as follows.
2. Pulse test
D
E
250 to 500
400 to 800
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1191 | Silicon PNP Epitaxial |
| 2SA1193K | Silicon PNP Epitaxial, Darlington |
| 2SA1193 | Silicon PNP Epitaxial, Darlington |
| 2SA1194 | Silicon PNP Epitaxial |
| 2SA1194K | Silicon PNP Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1190D | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 90V 0.1A 3-Pin TO-92 |
| 2SA1190DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1190E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1190ETZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1191 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
發(fā)布緊急采購，3分鐘左右您將得到回復。