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參數(shù)資料
| 型號： | 2SA1162 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 2SA1162 |
2SA1162
PNP Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 0.15Watts of Power Dissipation.
Collector-current: 0.15A
Collector-base Voltage: -50V
Operating and storage junction temperature range: -55
to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
-50
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
-50
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-100uAdc, IC=0)
-5
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-50Vdc, IE=0)
---
-0.1
uAdc
IEBO
Emitter Cutoff Current
(VEB=-5.0Vdc, IC=0)
---
-0.1
uAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC=-2.0mAdc, VCE=-6.0Vdc)
70
400
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-100mAdc, IB=-10mAdc)
---
-0.3
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=-1.0mAdc, VCE=-10Vdcz)
80
---
MHz
Cob
Collector Output Capacitance
(VCB=-10Vdc, IE=0, f=1MHz)
---
7
pF
NF
Noise Figure
(VCE=-6Vdc, IC=0.1mA, f=1KHz, Rg=10K
)
---
10
dB
CLASSIFICATION OF HFE(1)
Rank
O
Y
GR
Range
70-140
120-240
200-400
Marking
SO
SY
SG
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: 5
2008/01/01
TM
Micro Commercial Components
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0 and MSL Rating 1
www.mccsemi.com
1 of 2
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
E
B
C
2SA1162-O
2SA1162-Y
2SA1162-GR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1162-YTE85L | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1162OTE85L | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1162-OTE85R | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1162YTE85R | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1162TE85L | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1162_03 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications |
| 2SA1162_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications |
| 2SA1162_08 | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SA1162_10 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Silicon General Purpose Transistor |
| 2SA1162G | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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