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參數(shù)資料
| 型號(hào)： | 2SA1091-R |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 151K |
| 代理商： | 2SA1091-R |
2SK1163, 2SK1164
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
2SK1163
450
Drain to source voltage
2SK1164
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
11
A
Drain peak current
ID(pulse)*
1
40
A
Body to drain diode reverse drain current
IDR
11
A
Channel dissipation
Pch*
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK1163
450
Drain to source
breakdown voltage
2SK1164
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
2SK1163
VDS = 360 V, VGS = 0
Zero gate voltage drain
current
2SK1164
IDSS
—
250
A
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
2SK1163
—
0.55
0.7
Static drain to source on
state resistance
2SK1164
RDS(on)
—
0.60
0.8
ID = 5 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
5.0
8.0
—
S
ID = 5 A, VDS = 10 V *
3
Input capacitance
Ciss
—
1150
—
pF
Output capacitance
Coss
—
340
—
pF
Reverse transfer capacitance
Crss
—
55
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
17
—
ns
Rise time
tr
—
60
—
ns
Turn-off delay time
td(off)
—
95
—
ns
Fall time
tf
—
50
—
ns
ID = 5 A, VGS = 10 V,
RL = 6
Body to drain diode forward voltage
VDF
—
1.0
—
V
IF = 11 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
400
—
ns
IF = 11 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1091-R(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1091-R(TPE2,F) | 功能描述:兩極晶體管 - BJT Bipolar Small Signal Transistors RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1092 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-60V -.05A .4W ECB |
| 2SA1093 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORSC-65 -140V -10A 100W BCE |
| 2SA1094 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
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