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參數(shù)資料
| 型號： | 2SA1091-R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 151K |
| 代理商： | 2SA1091-R |
2SA1091
2003-03-24
1
TOSHIBA Transistor
Silicon PNP Triple Diffused Type (PCT process)
2SA1091
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 6 pF (typ.)
Complementary to 2SC2551.
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-300
V
Collector-emitter voltage
VCEO
-300
V
Emitter-base voltage
VEBO
-8
V
Collector current
IC
-100
mA
Base current
IB
-20
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -300 V, IE = 0
-0.1
mA
Emitter cut-off current
IEBO
VEB = -8 V, IC = 0
-0.1
mA
Collector-base breakdown voltage
V (BR) CBO
IC = -0.1 mA, IE = 0
-300
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = -1 mA, IB = 0
-300
V
hFE (1)
(Note)
VCE = -10 V, IC = -20 mA
30
150
DC current gain
hFE (2)
VCE = -10 V, IC = -1 mA
20
Collector-emitter saturation voltage
VCE (sat)
IC = -20 mA, IB = -2 mA
-0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = -20 mA, IB = -2 mA
-1.2
V
Transition frequency
fT
VCE = -10 V, IC = -20 mA
40
60
MHz
Collector output capacitance
Cob
VCB = -20 V, IE = 0, f = 1 MHz
6
8
pF
Note: hFE (1) classification R: 30~90 O: 50~150
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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| 2SA1121-B | SMALL SIGNAL TRANSISTOR |
| 2SA1122 | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1122D | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1091-R(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1091-R(TPE2,F) | 功能描述:兩極晶體管 - BJT Bipolar Small Signal Transistors RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1092 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-60V -.05A .4W ECB |
| 2SA1093 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORSC-65 -140V -10A 100W BCE |
| 2SA1094 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
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