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參數(shù)資料
| 型號： | 2N7606U3 |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 196K |
| 代理商： | 2N7606U3 |
Absolute Maximum Ratings
Parameter
Units
ID @VGS = 4.5V,TC = 25°C
Continuous Drain Current
22*
ID @VGS = 4.5V,TC = 100°C Continuous Drain Current
20
IDM
Pulsed Drain Current
88
PD @ TC = 25°C
Max. Power Dissipation
57
W
Linear Derating Factor
0.45
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
63
mJ
IAR
Avalanche Current
22
A
EAR
Repetitive Avalanche Energy
5.7
mJ
dv/dt
Peak Diode Recovery dv/dt
8.8
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
1.0 (Typical)
g
Pre-Irradiation
°C
A
RADIATION HARDENED
IRHLNJ77034
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-0.5)
12/02/10
www.irf.com
1
60V, N-CHANNEL
TECHNOLOGY
For footnotes refer to the last page
SMD-0.5
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n Surface Mount
n Light Weight
* Current is limited by package
2N7606U3
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
Product Summary
Part Number
Radiation Level
RDS(on)
ID
IRHLNJ77034
100K Rads (Si)
0.035
22A*
IRHLNJ73034
300K Rads (Si)
0.035
22A*
PD-97301B
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