- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30471 > 2N7612M1 1800 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-036AB PDF資料下載
參數(shù)資料
| 型號： | 2N7612M1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1800 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-036AB |
| 封裝： | HERMETIC SEALED PACKAGE-14 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 209K |
| 代理商： | 2N7612M1 |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 4.5V, TC=25°C
Continuous Drain Current
1.8
ID @ VGS = 4.5V, TC=100°C Continuous Drain Current
1.1
IDM
Pulsed Drain Current
7.2
PD @ TC = 25°C
Max. Power Dissipation
1.4
W
Linear Derating Factor
0.01
W/°C
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
97
mJ
IAR
Avalanche Current
1.8
A
EAR
Repetitive Avalanche Energy
0.14
mJ
dv/dt
Peak Diode Recovery dv/dt
11
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063in/1.6mm from case for 10s)
Weight
1.3 (Typical)
g
oC
A
03/20/08
www.irf.com
1
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHLG77110
100K Rads (Si)
0.22
1.8A
IRHLG73110
300K Rads (Si)
0.22
1.8A
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED
IRHLG77110
LOGIC LEVEL POWER MOSFET
100V, Quad N-CHANNEL
THRU-HOLE (MO-036AB)
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n
Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Light Weight
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
MO-036AB
2N7612M1
PD-97178
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N859 | 50 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N869AXDCSMG4 | 100 mA, 25 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
| 2N869AXG4 | 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N869A | 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N869A-JQR-A | 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7622U2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2) |
| 2N7632UC | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET |
| 2N7635-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N7636-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 4A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N7637-GA | 功能描述:兩極晶體管 - BJT SiC High Temp SJT 650V 7A 225 Degree C RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。