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參數(shù)資料
| 型號(hào)： | 2N7000AMO |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SPT, TO-92 VARIANT, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 263K |
| 代理商： | 2N7000AMO |
Philips Semiconductors
2N7000
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 03 — 19 May 2000
11 of 13
9397 750 07153
Philips Electronics N.V. 2000 All rights reserved.
11. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Denitions
Short-form specication — The data in a short-form specication is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values denition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specication is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specied use without further testing or modication.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design
and/or
performance.
Philips
Semiconductors
assumes
no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specied.
Datasheet status
Product status
Objective specication
Development
This data sheet contains the design target or goal specications for product development. Specication may
change in any manner without notice.
Preliminary specication
Qualication
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specication
Production
This data sheet contains nal specications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N7000-AP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Ammo |
| 2N7000BU | 功能描述:MOSFET 60V N-Channel Sm Sig RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N7000BU_T | |
| 2N7000CSM | 制造商:TT Electronics/ Semelab 功能描述:MOSFETHI-RELN CH60V0.2ALCC1 制造商:TT Electronics/ Semelab 功能描述:MOSFET,HI-REL,N CH,60V,0.2A,LCC1 |
| 2N7000CSM_06 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Na??CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
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