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| 型號(hào)： | 2N7000,126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SPT, TO-92 VARIANT, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大小： | 263K |
| 代理商： | 2N7000,126 |
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Philips Semiconductors
2N7000
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 03 — 19 May 2000
2 of 13
9397 750 07153
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
60
V
ID
drain current (DC)
Tamb =25 °C; VGS =10V
300
mA
Ptot
total power dissipation
Tamb =25 °C
0.83
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 500 mA
2.8
5
VGS = 4.5 V; ID = 75 mA
3.8
5.3
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
60
V
VDGR
drain-gate voltage (DC)
Tj =25to150 °C; RGS =20k
60
V
VGS
gate-source voltage (DC)
±30
V
VGSM
peak gate-source voltage
tp ≤ 50 s; pulsed; duty cycle = 25%
±40
V
ID
drain current (DC)
Tamb =25 °C; VGS =10V;
300
mA
190
mA
IDM
peak drain current
Tamb =25 °C; pulsed; tp ≤ 10 s;
1.3
A
Ptot
total power dissipation
0.83
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tamb =25 °C
300
mA
ISM
peak source (diode forward) current
Tamb =25 °C; pulsed; tp ≤ 10 s
1.3
A
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