參數(shù)資料
型號: 2N6770
英文描述: 500V, 12A, N-Channel, Enhancement Mode Power MOSFET(500V, 12A,N溝道,增強(qiáng)模式功率MOS場效應(yīng)管)
中文描述: 的500V,12A條,N溝道,增強(qiáng)模式功率MOSFET(500V及12A條,?溝道,增強(qiáng)模式功率馬鞍山場效應(yīng)管)
文件頁數(shù): 1/5頁
文件大?。?/td> 62K
代理商: 2N6770
FEATURES
Low R
DS(on)
Ease of Paralleling
Qualified to MIL-PRF-19500/543
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for
Military requirements where small size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
7 03 R0
100V Thru 500V, Up to 38A, N-Channel,
Enhancement Mode MOSFET Power Transistor
JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,
QUALIFIED TO MIL-PRF-19500/543
1.197
1.177
0.675
0.655
0.188 R.
MAX.
0.440
0.420
0.161
0.151
0.525 R.
MAX.
0.225
0.205
SEATING
PLANE
0.312
MIN.
0.450
0.250
0.043
0.038
2 PLCS.
0.135
MAX.
0.875
MAX.
1.53
REF.
MECHANICAL OUTLINE
SCHEMATIC
Pin Connection
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
PRIMARY ELECTRICAL CHARACTERISTICS @ T
C
= 25
°
C
PART NUMBER
2N6764
2N6766
2N6768
2N6770
V
DS,
Volts
100
200
400
500
R
DS(on)
.055
.085
.30
.40
I
D,
Amps
38
30
14
12
2N6764, JANTX2N6764, JANTXV2N6764
2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768
2N6770, JANTX2N6770, JANTXV2N6770
Note: For part number 2N6764 and 2N6766 the mechanical dimensions are the same as above
except the lead diameter is 0.058 min to 0.063 max.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6770_10 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET
2N6770JANTX 制造商:International Rectifier 功能描述: 制造商:Microsemi Corporation 功能描述:
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