參數(shù)資料
型號(hào): 2N6668BC
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 10 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝: TO-220AB, 3 PIN
文件頁(yè)數(shù): 61/61頁(yè)
文件大?。?/td> 376K
代理商: 2N6668BC
2–7
Selector Guide
Motorola Bipolar Power Transistor Device Data
Table 2. Plastic TO–220AB (continued)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25
°C
fT
MHz
Min
Resistive Switching
@ IC
Amp
hFE
Min/Max
Device Type
VCEO(sus)
Volts
Min(8)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25
°C
fT
MHz
Min
@ IC
Amp
tf
s
Max
ts
s
Max
@ IC
Amp
hFE
Min/Max
PNP
NPN
VCEO(sus)
Volts
Min(8)
10
100
BDX33C (2)
BDX34C (2)
750 min
3
70
450/1000
MJE18009
14/34
1.5
2.75(3)
0.2(3)
3
12
150
12
400/700
MJE13009
6/30
8
3
0.7
8
4
100
15
80
2N6488
2N6491
20/150
5
0.6 typ
0.3 typ
5
75
D44VH10
D45VH10
20 min
4
0.5
0.09
8
50 typ
83
100
BDW42 (2)
BDW47 (2)
1k min
5
1 typ
1.5 typ
5
4
85
Table 3. Plastic TO–218 Type
Device Type
Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min(8)
NPN
PNP
hFE
Min/Max
@ IC
Amp
ts
s
Max
tf
s
Max
@ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25
°C
8
500/1000
MJH16006A
5 min
8
2.5
0.25
5
125
10
60
TIP140(2)
TIP145(2)
500 min
10
2.5 typ
5
4(1)
125
TIP141 (2)
TIP146 (2)
500 min
10
2.5 typ
5
4(1)
125
100
BDV65B (2)
BDV64B (2)
1k min
5
125
TIP33C
TIP34C
20/100
3
80
TIP142(2)
TIP147(2)
500 min
10
2.5 typ
5
4(1)
125
400
BU323AP (2)
150/100
6
15
6
125
MJH10012 (2)
100/2k
6
15
6
118
(1)|hFE| @ 1 MHz
(2)Darlington
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 340D
(TO–218 Type,
SOT–93)
1
3
2
4
相關(guān)PDF資料
PDF描述
2N6667AJ 10 A, 60 V, PNP, Si, POWER TRANSISTOR
2N6667DW 10 A, 60 V, PNP, Si, POWER TRANSISTOR
2N6668BV 10 A, 80 V, PNP, Si, POWER TRANSISTOR
2N6667BV 10 A, 60 V, PNP, Si, POWER TRANSISTOR
2N6667BU 10 A, 60 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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