參數(shù)資料
型號(hào)： 2N6668BC
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 10 A, 80 V, PNP, Si, POWER TRANSISTOR
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 12/61頁
文件大?。?/td> 376K
代理商： 2N6668BC
2N6667 2N6668
3–148
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
2N6667
(IC = 200 mAdc, IB = 0)
2N6668
VCEO(sus)
60
80
—
Vdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
2N6667
(VCE = 80 Vdc, IB = 0)
2N6668
ICEO
—
1
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6668
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N6668
ICEX
—
300
3
Adc
mAdc
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
—
5
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 5 Adc, VCE = 3 Vdc)
(IC = 10 Adc, VCE = 3 Vdc)
hFE
1000
100
20000
—
—
Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
VCE(sat)
—
2
3
Vdc
Base–Emitter Saturation Voltage(IC = 5 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
VBE(sat)
—
2.8
4.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
|hfe|
20
—
—
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
—
200
pF
Small–Signal Current Gain (IC = 1 Adc, VCE = 5 Vdc, f = 1 kHz)
hfe
1000
—
—
* Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
Figure 2. Switching Times Test Circuit
0
VCC
– 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1, MUST BE FAST RECOVERY TYPES e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
D1
51
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8 V
V1
APPROX
– 12 V
[ 8 k
[ 120
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0
RB
t,TIME
(
s)
80
40
20
0
20
40
80
100
120
160
Figure 3. Power Derating
T, TEMPERATURE (
°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
60
TA TC
4
2
1
3
0
60
140
TA
TC
0.1
Figure 4. Typical Switching Times
IC, COLLECTOR CURRENT (AMPS)
5
0.7
0.3
0.2
10
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
tf
15
ts
tr
0.1
1
3
0.5
2
.td
0.5
2
7
0.3
0.7
3
7
10
相關(guān)PDF資料
PDF描述
2N6667AJ 10 A, 60 V, PNP, Si, POWER TRANSISTOR
2N6667DW 10 A, 60 V, PNP, Si, POWER TRANSISTOR
2N6668BV 10 A, 80 V, PNP, Si, POWER TRANSISTOR
2N6667BV 10 A, 60 V, PNP, Si, POWER TRANSISTOR
2N6667BU 10 A, 60 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6668G 功能描述:達(dá)林頓晶體管 10A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2N6671 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 8A 3PIN TO-3 - Bulk
2N6672 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 350V 8A 3PIN TO-3 - Bulk
2N6673 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 400V 8A 3PIN TO-3 - Bulk 制造商: 功能描述: 制造商:undefined 功能描述:
2N6674 制造商:Aeroflex / Metelics 功能描述:NPN POWER TRANSISTOR - Bulk 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 15A 3PIN TO-3 - Bulk
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