參數(shù)資料
型號(hào)： 2N6667BU
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 10 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 23/61頁(yè)
文件大小： 376K
代理商： 2N6667BU
2N6667 2N6668
3–149
Motorola Bipolar Power Transistor Device Data
Figure 5. Thermal Response
t, TIME (ms)
1
0.01
0.5
0.3
0.2
0.1
0.05
0.03
0.02
r(t)
NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
1000
500
Z
θJC(t) = r(t) RθJC
R
θJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.05
0.1
0.02
0.01
0.2
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
SECOND BREAKDOWN LIMIT
20
1
Figure 6. Maximum Safe Operating Area
2
0.02
10
20
100
TJ = 150°C
0.2
5
0.5
I C
,COLLECT
OR
CURRENT
(AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
50
1
0.1
dc
270
37
2N6667
2N6668
CURVES APPLY BELOW RATED VCEO
1 ms
100
s
5 ms
3
0.03
0.05
0.3
530
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
10,000
1
Figure 7. Typical Small–Signal Current Gain
f, FREQUENCY (kHz)
10
2
5
10
20
50
100
200
1000
500
100
5000
h
FE
,SMALL–SIGNAL
CURENT
GAIN
20
200
500
2000
1000
50
TC = 25°C
VCE = 4 VOLTS
IC = 3 AMPS
300
0.1
Figure 8. Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1
2
5
20
100
10
C,
CAP
ACIT
ANCE
(pF)
200
100
70
50
Cib
Cob
50
0.2
0.5
TJ = 25°C
37
70
30
300
相關(guān)PDF資料
PDF描述
2N6671.MOD 8 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N6671R1 8 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N6673.MOD 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N6673.MODR1 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-204AA
2N6674-JQR-B 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-204AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N6667G 功能描述:達(dá)林頓晶體管 10A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2N6668 功能描述:兩極晶體管 - BJT PNP Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N6668 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-220
2N6668G 功能描述:達(dá)林頓晶體管 10A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2N6671 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 300V 8A 3PIN TO-3 - Bulk
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