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參數(shù)資料
| 型號(hào)： | 2N6661 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 90 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 238K |
| 代理商： | 2N6661 |
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2N6661 Availability
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2N6661 Information
Category Transistors
Class MOSFETs and TempFETs
2N6661 Specifications
Military/High-Rel : N
V(BR)DSS (V) : 90
V(BR)GSS (V) : 30
I(D) Max. (A) : 2.0
I(DM) Max. (A) Pulsed I(D) :
@Tem p (шC) :
IDM Max (@25шC Am b) :
@Pulse Width (s) (Condition) :
Absolute Max. Power Diss. (W) : 6.25
Minim um Operating Tem p (шC) :
Maxim um Operating Tem p (шC) : 150х
Therm al Resistance Junc-Case :
Therm al Resistance Junc-Am b. :
V(GS)th Max. (V) :
V(GS)th (V) (Min) :
@(VDS) (V) (Test Condition) :
@I(D) (A) (Test Condition) :
I(DSS) Max. (A) :
@V(DS) (V) (Test Condition) :
@Tem p (шC) (Test Condition) :
I(GSS) Max. (A) : 100n
@V(GS) (V) (Test Condition) :
r(DS)on Max. (Ohm s) : 4.0
@V(GS) (V) (Test Condition) :
@I(D) (A) (Test Condition) :
g(fs) Min. (S) Trans. conduct. : 170m
g(fs) Max; (S) Trans. conduct; : 195mВ
@V(DS) (V) (Test Condition) : 25
@I(D) (A) (Test Condition) : 500m
C(iss) Max. (F) : 50p
@V(DS) (V) (Test Condition) :
@V(GS) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
td(on) Max (s) On tim e delay :
t(r) Max. (s) Rise tim e : 5.0n
t(d)off Max. (s) Off tim e :
t(f) Max. (s) Fall tim e. : 5.0n
Package Style : TO-39
Mounting Style : T
Description :
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Lanuage Translator:
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AMS has m ore than 17,000,000 electronic com ponents sitting on our warehouse shelves? With that kind of inventory, we can alm ost guarantee
that we've got the right part for the job! To find out for yourself, give us a call today: (973) 377-9566!
133 Kings Road, Madison, NJ 07940 USA (973) 377-9566 / Fax: (973) 377-3078
Copyright 2004 A merican Microsemiconductor Inc. A ll Rights Reserved.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6661 | 2000 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 2N6667 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N6667 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N6668BU | 10 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2N6667BD | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6661_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6661_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 90 V (D-S) MOSFET |
| 2N6661-2 | 功能描述:MOSFET 90V 0.86A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6661CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6661DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL N–CHANNEL ENHANCEMENT MODE |
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