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參數(shù)資料
| 型號(hào)： | 2N6661CSM4-JQR-AG4 |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 0.9 A, 90 V, 5.3 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-041BA |
| 封裝： | LCC3-4 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | 2N6661CSM4-JQR-AG4 |
2N6661CSM4
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 3779, ISSUE 3
STATIC ELECTRICAL RATINGS (T
case=25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ.
Max.
Unit
V
(BR)DSS
Drain – Source Breakdown Voltage
V
GS = 0V
I
D = 1.0A
90
-
V
DS = VGS
I
D = 1.0mA
0.8
-
2
T
C = 125°C
0.3
-
V
GS(th)
Gate – Source threshold Voltage
T
C = -55°C
-
2.5
V
GS = ±20V
V
DS = 0V
-
±100
I
GSS
Gate – Source Leakage Current
T
C = 125°C
-
±500
nA
V
DS = 72V
V
GS = 0V
-
1.0
I
DSS
Zero Gate Voltage Drain Current
T
C = 125°C
-
100
A
I
D(on)
On – State Drain Current (note 2)
V
DS = 15V
V
GS = 10V
1.5
-
A
V
GS = 5V
I
D = 0.3A
-
5.3
V
GS = 10V
I
D = 1.0A
-
4
R
DS(on)
Drain – Source On Resistance
(note 3)
T
C = 125°C
-
7.5
V
GS = 5V
I
D = 0.3A
-
1.6
V
GS = 10V
I
D = 1.0A
-
4
V
DS(on)
Drain – Source On Voltage (note 2)
T
C = 125°C
-
7.5
V
g
FS
Forward Transconductance (Note 2)
V
DS = 7.5V
I
D = 0.475A
170
-
ms
V
SD
Diode Forward Voltage (Note 2)
V
GS = 0V
I
s = 0.86A
0.7
-
1.4
V
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
-
50
C
oss
Output Capacitance
-
40
C
rss
Reverse Transfer Capacitance
V
DS = 25V
f = 1.0MHz
V
GS = 0V
-
10
pF
T
d(on)
Turn-On Delay
-
10
T
d(off)
Turn-Off Delay Time
V
DD = 25V
R
GS = 50
I
D = 1A
(Note 2)
-
10
ns
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|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6661DCSM | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:DUAL N–CHANNEL ENHANCEMENT MODE |
| 2N6661-E3 | 功能描述:MOSFET 90V 0.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6661-E3/ | 制造商:Vishay Siliconix 功能描述:MOSFET |
| 2N6661JAN02 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD 制造商:Vishay Siliconix 功能描述:N-CH MOSFET TO-39 90V 4 OHM (MOTS) - Bulk |
| 2N6661JANTX | 制造商:Vishay Semiconductors 功能描述: |
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