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參數(shù)資料
| 型號： | 2N6497BUBU |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 12/61頁 |
| 文件大?。?/td> | 366K |
| 代理商： | 2N6497BUBU |
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2N6497 2N6498
3–137
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 25 mAdc, IB = 0)
2N6497
2N6498
VCEO(sus)
250
300
—
—
Vdc
Collector Cutoff Current
(VCE = 350 Vdc, VBE(off) = 1.5 Vdc)
2N6497
(VCE = 400 Vdc, VBE(off) = 1.5 Vdc)
2N6498
(VCE = 175 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
2N6497
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
2N6498
ICEX
—
—
1.0
10
mAdc
Emitter Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
IEBO
—
—
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.5 Adc, VCE = 10 Vdc)
(IC = 5.0 Adc, VCE = 10 Vdc)
hFE
10
3.0
—
75
—
—
Collector–Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
2N6497
2N6498
(IC = 5.0 Adc, IB = 2.0 Adc)
All Devices
VCE(sat)
—
—
1.0
1.25
5.0
Vdc
Base–Emitter Saturation Voltage
(IC = 2.5 Adc, IB = 500 mAdc)
(IC = 5.0 Adc, IB = 2.0 Adc)
VBE(sat)
—
—
1.5
2.5
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
5.0
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
—
—
150
pF
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = 0.5 Adc)
tr
—
0.4
1.0
s
Storage Time
(VCC = 125 Vdc, IC = 2.5 Adc, VBE = 5.0 Vdc, IB1 = IB2 = 0.5 Adc)
ts
—
1.4
2.5
s
Fall Time
(VCC = 125 Vdc, IC = 2.5 Adc, IB1 = IB2 = 0.5 Adc)
tf
—
0.45
1.0
s
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
Figure 1. Switching Time Test Circuit
1.0
Figure 2. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
0.05
5.0
VCC = 125 V
IC/IB = 5.0
TJ = 25°C
1.0
0.1
2.0
+ 11 V
0
SCOPE
RB [ 20
– 5.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
– 9.0 V
D1
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
VCC
+ 125 V
RC [ 50
tr
td @ VBE(off) = 5.0 V
t,TIME
(
s)
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.07
3.0
0.3
0.2
0.5 0.7
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參數(shù)描述 |
|---|---|
| 2N6497G | 功能描述:兩極晶體管 - BJT 5A 250V 80W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| 2N6499 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR NPN 350V TO-220 制造商:SPC Multicomp 功能描述:TRANSISTORNPN5A350VTO220 制造商:SPC Multicomp 功能描述:TRANSISTOR,NPN,5A,350V,TO220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, NPN, 350V, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency Typ ft:5MHz; Power Dissipation Pd:80W; DC Collector Current:5A; DC Current Gain hFE:75; No. of Pins:3 ;RoHS Compliant: Yes |
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| 2N65_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2A, 650V N-CHANNEL POWER MOSFET |
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